This move aims to expand DRAM and NAND production bases to meet the growing demand for HBM and advanced memory driven by AI. Specifically, the Yongin Y2 factory will focus on HBM and next-generation DRAM, while the Cheongju M17 factory will enhance NAND production capacity. Both factories are expected to commence mass production sequentially from late 2028 to 2029 at the earliest, with investments to be completed by 2031. Production capacity will be gradually expanded based on customer demand.