ASML and TSMC are collaborating to develop 12-inch EUV photomasks, aiming to boost High-NA EUV productivity by 40% by 2033.
ASML and TSMC have announced a collaboration to develop larger 12-inch extreme ultraviolet (EUV) photomasks, replacing the current 6-inch masks. This initiative aims to boost fab productivity, reduce chip manufacturing costs, and eliminate stitching limitations. Marco Pieters, CTO of ASML, stated that successful implementation of this technology could increase the productivity of High-NA EUV systems by 40%. TSMC plans to adopt High-NA EUV technology in its advanced nodes starting in 2030, with a pilot production line for 12-inch masks expected by 2031, targeting mass production readiness by 2033.
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