Guangzhou has issued the "Guangzhou Plan for Accelerating the Development of an Advanced Manufacturing Powerhouse (2024–2035)." The plan states that the city will vigorously develop the manufacturing of third-generation semiconductor materials such as silicon carbide, zinc oxide, and gallium oxide; support the R&D and manufacturing of compound semiconductor devices and modules such as gallium nitride and silicon carbide; accelerate the R&D and production of photoresists, high-purity chemical reagents, electronic gases, carbon-based materials, and high-density packaging substrates, and foster the growth of enterprises in compound semiconductor IDM (integrated device manufacturing), wide-bandgap semiconductor materials, and electronic-grade polysilicon and silicon wafers. It also supports the research, development, and commercialization of devices such as RF components, sensors, nanoscale ceramic powders, and power electronics, and promotes the widespread adoption of compound semiconductor products.