According to Reuters, Kim Taewoo, Executive Vice President at Samsung Electronics, stated that High Bandwidth Memory (HBM) is expected to account for nearly 30% of the global DRAM industry's total wafer capacity by 2027, up from approximately 20% currently. He noted that HBM shares the same wafer capacity as traditional DRAM, and the continuous expansion of HBM will further squeeze the supply of traditional DRAM. Market research firm TrendForce anticipates that the competition for advanced processes and wafer capacity between HBM and traditional DRAM will continue, driven by the growth in AI server demand. Coupled with the time required for next-generation products to achieve yield and production ramp-up, the memory market supply is expected to remain tight in 2027. TrendForce has already revised up its forecast for the HBM blended average selling price in 2027, projecting a significant year-on-year jump of 121%.