On August 4, local time, Samsung Electronics officially unveiled several cutting-edge memory technologies at the annual Flash Memory Summit (FMS). Among them, zHBM is a conceptual product that vertically stacks High Bandwidth Memory (HBM) directly on top of AI accelerator chips. It is expected to achieve 8 times the performance of the next-generation HBM5, over 10 times its memory density, and a 3-fold improvement in power efficiency, with a target mass production time around 2029. In addition, Samsung also introduced zNAND-O, a high-bandwidth flash memory solution for edge AI, planned for mass production in 2028; and the industry's first V10 BV-NAND, which uses wafer bonding technology and has over 400 stacked layers. Samsung stated that these innovations are aimed at enhancing its competitiveness in the field of AI technology, surpassing SK Hynix and Micron Technology.